| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin permitting manufacture of a photoresist having excellent transparency to radiations, especially KrF excimer lasers, resolution, sensitivity, heat resistance and plasma etching resistance as a chemical sensitization type resist and giving rectangular photoresist patterns with high reproducibility. <P>SOLUTION: The resin consists of a novolak type phenol resin obtained by reacting specified phenols with aldehydes in the presence of an acid catalyst, with a part of hydroxyl groups of the resin protected with a group capable of leaving under an action of an acid, and the phenols preferably contain terpene diphenol derived from limonene and pyrogallol. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
