发明名称 THERMAL TYPE INFRARED SOLID-STATE IMAGING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a thermal type infrared solid-state imaging element of less signal drift caused by fluctuation in element temperature or in power supply voltage. SOLUTION: A bias line 11 of an integration circuit 7 is subjected to common connection, and a reference signal to be changed according to fluctuation in element temperature or power supply voltage is input in the bias line 11. Drift portion caused by the fluctuation in element temperature and power supply voltage is input in both a gate and a source of an integration transistor constituting the integration circuit 7, and eliminated from the output. The reference signal input in the bias line 11 is generated by a reference pixel 19 which is connected to a same power source 6 as that of pixels to detect only the fluctuation in element temperature, and adjusted to the optimum voltage by a level shift circuit and a low pass filter in a bias power supply circuit 21, and noises are eliminated thereby. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004233313(A) 申请公布日期 2004.08.19
申请号 JP20030025534 申请日期 2003.02.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 UENO MASAFUMI;ISHIKAWA TOMOHIRO
分类号 G01J1/42;G01J1/44;H01L27/14;H04N5/33;H04N5/335;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):G01J1/42 主分类号 G01J1/42
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