发明名称 NITRIDE SINGLE CRYSTAL AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a large-sized nitride single crystal and a method for producing the same. SOLUTION: In the method for producing the nitride single crystal, the nitride single crystal 14 is grown on a seed crystal 13 by forming a substance transport medium layer 12 containing the compound of a rare earth element in the periphery of a nitride powder 11, and bringing the seed crystal 13 into contact with the substance transport medium layer 12. In the method for producing the nitride single crystal, the substance transport medium layer 12 contains at least one kind selected from the group of aluminum compounds, alkaline earth metal compounds, and transition metal compounds, and one compound of rare earth elements. Thereby, the nitride single crystal having crystal diameters of≥10 mm can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004231467(A) 申请公布日期 2004.08.19
申请号 JP20030022059 申请日期 2003.01.30
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UEMATSU KOJI;NAKAHATA SEIJI
分类号 C30B29/38;C30B9/06;(IPC1-7):C30B29/38 主分类号 C30B29/38
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