| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristic of a nonvolatile semiconductor memory. SOLUTION: In the nonvolatile memory constituted of a MOS (metal oxide semiconductor) transistor having a gate insulating film 102 and a selection gate electrode 103; and a memory MOS transistor including a capacity insulating film having a lower layer potential barrier film 104a, a charge holding film 104b, and an upper layer potential barrier film 104c and also including a memory gate electrode 105, an Si oxide/nitride film is used as the charge holding film 104b, and to improve the deterioration of Gm caused by the use, the upper layer potential barrier film 104c is omitted or the thickness thereof is set to 1 nm or less to lower an erase gate voltage. The charge holding film is made up of the Si oxide/nitride film as a main charge holding film and the Si nitride film disposed above or under the charge holding film to form a potential barrier against only holes. A hot hole erase method is used as the erase method to lower erase voltage. COPYRIGHT: (C)2004,JPO&NCIPI
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