发明名称 |
High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell |
摘要 |
A new magnetic RAM cell device is achieved. The device comprises a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A diode is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.
|
申请公布号 |
US2004160251(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20030366498 |
申请日期 |
2003.02.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN WEN-CHIN;TANG DENNY D.;CHIH YU DER |
分类号 |
G11C11/00;G11C11/15;G11C11/16;H01L43/00;H03K5/02;(IPC1-7):H03K5/02 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|