发明名称 Methods of forming integrated circuit devices including insulation layers
摘要 Methods of forming an electronic device including a substrate and a raised pattern on the substrate are provided. For example, a first insulating layer may be formed on the raised pattern and on the substrate. More particularly, forming the first insulating layer may include forming a first portion of the first insulating layer using a first processing condition and forming a second portion of the first insulating layer using a second processing condition. After forming the first insulating layer including the first and second portions, portions of the first insulating layer may be removed to expose portions of the raised pattern while maintaining portions of the first insulating layer on the substrate. After removing portions of the first insulating layer, a second insulating layer may be formed on the exposed portions of the raised pattern and on the maintained portions of the first insulating layer.
申请公布号 US2004161919(A1) 申请公布日期 2004.08.19
申请号 US20040775677 申请日期 2004.02.10
申请人 CHA YONG-WON;KIM WON-JIN 发明人 CHA YONG-WON;KIM WON-JIN
分类号 H01L21/31;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/31
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