发明名称 |
Laser employing a zinc-doped tunnel-junction |
摘要 |
An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 10<19 >dopant atoms per cm<3 >or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
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申请公布号 |
US2004161013(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20030367200 |
申请日期 |
2003.02.13 |
申请人 |
BOUR DAVID;LIN CHAOKUN;TAN MICHAEL;PEREZ BILL |
发明人 |
BOUR DAVID;LIN CHAOKUN;TAN MICHAEL;PEREZ BILL |
分类号 |
H01S5/183;H01S5/30;(IPC1-7):H01S3/08 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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