发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device according to an aspect of the present invention includes memory cells each having a data storage section which stores data and a transfer gate section which has a MOSFET of a first conductive type for writing the data to the data storage section and reading the data from the data storage section, wherein a potential corresponding to the data stored in the data storage section is applied as a substrate bias of the MOSFET.
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申请公布号 |
US2004160803(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040781905 |
申请日期 |
2004.02.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOBAYASHI HIROYUKI;HAMADA MOTOTSUGU |
分类号 |
G11C11/412;H01L21/8238;H01L21/8244;H01L27/08;H01L27/092;H01L27/11;H01L29/786;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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