发明名称 OVERHEAT DETECTION DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To precisely detect the overheat state of each conducting element even in a state that a plurality of conducting elements are arranged adjacent to one another. <P>SOLUTION: Diodes D2a, D2b that are used for the overheat detection of a transistor M2 are arranged adjacent to a side facing a transistor M1 and a side facing a transistor M3 among the sides of the transistor M2, respectively. An overheat detection circuit H2 outputs an overheat detection signal Q2 when output voltages V2a, V2b of the diodes D2a, D2b are dropped lower than a reference voltage Vr. Similar operations are conducted by the transistors M1, M3. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004236435(A) 申请公布日期 2004.08.19
申请号 JP20030021952 申请日期 2003.01.30
申请人 DENSO CORP 发明人 YAMAMOTO TOMOHISA
分类号 G01K3/00;G01K7/01;H01L21/822;H01L27/04;H02H5/04 主分类号 G01K3/00
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