| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield of a semiconductor integrated circuit device. SOLUTION: After a photoresist film is applied onto the insulating film 7b of a wafer 1W, a desired pattern is transferred by performing an exposure process at this. Then, after a developing process is performed on the wafer 1W after the exposure process and a photoresist pattern 11a is formed, the cleaning process and a spin drying process are sequentially performed at the wafer 1W. Thereafter, after the photoresist residue 14 adhered to the bottom of the opening 12 of the photoresist pattern1 1a is removed by a light ashing process, a through hole is bored through the insulating film 7b by a dry etching process using an etching gas, etc. containing C<SB>5</SB>F<SB>8</SB>, O<SB>2</SB>and Ar gas with the photoresist pattern 11a used as an etching mask. Thus, the through hole opening fault due to the photoresist residue 14 can be prevented. COPYRIGHT: (C)2004,JPO&NCIPI |
