| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure system which can reduce the wafers having line width defects caused by the delay in line width measurement when manufacturing wafers. SOLUTION: This exposure system comprises an exposure apparatus 11 which exposes a pattern of a mask to a substrate W, a line width measuring instrument 12 which is in line with the exposure apparatus 11 and measures the width of the line formed on the substrate W by using scatterometory techniques, and a correction device 13 which corrects exposure condition parameters of the exposure apparatus 11 using the data from the line width measuring instrument 12. COPYRIGHT: (C)2004,JPO&NCIPI
|
