SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a DRAM (dynamic RAM)-mixed device where a CMOS (complementary MOS) logic and a plurality of DRAMs having different applications are mixedly mounted on the same semiconductor substrate and which can satisfy low power consumption and high speed performance simultaneously while securing a sufficient signal holding characteristic.

SOLUTION: The charge accumulation characteristic of memory cells is optimized by making the capacity of the memory cells in a first DRAM 102 requiring high speed signal processing smaller than the capacity of the memory cells in a second DRAM 103 requiring sufficient signal holding. A resistance produced by connecting a capacitive element of the DRAM and the semiconductor substrate by a plug can be optimized.

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