| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor which ensures large capacitance of a capacitor. <P>SOLUTION: The method is provided for manufacturing a semiconductor device comprising a storage node electrode 160, a dielectric film 17 and a cell plate electrode 18. The storage node electrode 160 consists of a CVD-Ru layer 22 having an uneven surface, which has been formed without a nucleated ruthenium layer, and a CVD-Ru film 16 formed on the nucleated ruthenium layer. The dielectric film 17 is formed on the storage node electrode 160 at its uneven surface. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
