| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a blue semiconductor laser device and a method of manufacturing the same whereby a laser beam can be emitted with high accuracy of position by surely packaging a semiconductor laser element on a semiconductor substrate with high accuracy. <P>SOLUTION: A semiconductor laser element 10 is disposed on an SiN film 105, which is formed on a p-type layer 100, via Ti layers 110a and 110b, Au layers 111a and 111b, a heatsink layer 113, and a solder layer 114 (e.g. about 4 μm in thickness). Of these layers, the heatsink layer 113 is interposed between the Au layer 111a and the Ti layer 110b and has a thickness of about 20 μm. In this way, the heatsink layer 113 is larger in thickness than the Au layers 111a and 111b (0.4 μm in thickness) to secure the installation position of the semiconductor layer element 10. Further, a mirror part 50 for reflecting a semiconductor laser beam has an Al layer 116 and a dielectric layer 117 which form a reflective film structure with high reflectivity to a blue ray. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
