| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of reducing an environmental load. SOLUTION: An etching device is constituted of an ozone generating mechanism 1, a bubbling tank 3 filled with ultrapure water 2, an ultrapure water producing mechanism 4 for producing the ultrapure water 2, an acidic or alkaline gas producing mechanism 5 for producing acidic or alkaline gas and a processing tank 7 equipped with a wafer retaining table 6. Ozone and water vapor are supplied into the processing tank 7 from a gas supplying port 11, and the acidic or alkaline gas is supplied from another gas supplying port 13 to etch the semiconductor wafer 15, retained in the processing tank 7 and consisting of a GaAs base material, in a gas phase. COPYRIGHT: (C)2004,JPO&NCIPI
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