| 摘要 |
PROBLEM TO BE SOLVED: To propose a process for forming a clad structure constituted of a magnetic body in a bit line in a groove wiring formation process. SOLUTION: In this method for manufacturing a magnetic storage device equipped with a magnetic resistance effect type storage element, an etching stop layer 51 with which a storage element 13 is coated is formed on a first insulating film 41 formed in a status that the upper face of the storage element 13 is exposed, a second insulating film 42 is formed, a wiring groove 43 for a bit line 12 is formed on the second insulating film 42, and a first barrier metal layer 121 and a magnetic body layer 122 are successively formed on the internal face of the wiring groove 43 and the surface of the second insulating film 42. Further, the upper face of the storage element 13 is exposed at the bottom of the wiring groove 43, a copper film 124 is embedded through a second barrier metal layer 123 in the wiring groove 43, and any unnecessary copper film 124 and second barrier metal layer 123 are removed so that a bit line 12 constituted of the copper film 124 can be formed in the wiring groove 43. COPYRIGHT: (C)2004,JPO&NCIPI
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