| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of increasing the speed of memory operation without requiring any new external signal lines and external control. SOLUTION: An XOR gate 6 receives input from a pair of read-out data lines GIOR, /GIOR and outputs a self precharge signal SELFPRE when the potential difference of the pair of read-out data lines GIOR, /GIOR is open, thus executing precharge operation in self-alignment manner when the potential difference of the pair of read-out data lines GIOR, /GIOR is open when issuing a READ command, and hence eliminating the need for a precharge command from the outside when issuing the READ command and increasing speed easily. COPYRIGHT: (C)2004,JPO&NCIPI
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