发明名称 |
Method for forming wire line by damascene process using hard mask formed from contacts |
摘要 |
A method for forming a wire line by a damascene process includes forming a first insulating layer on a semiconductor substrate, etching the first insulating layer to form a contact hole, and forming a first conductive layer over the first insulating layer that fills the contact hole. The first conductive layer is patterned, and a storage node contact is formed that fills the contact hole and is electrically connected to the semiconductor substrate. A hard mask is formed over the storage node contact and the first insulating layer is etched using the hard mask as an etch mask to form a trench in the first insulating layer. A bit line is formed in the trench that is electrically connected to the semiconductor substrate. A second insulating layer is formed that covers the bit line. The second insulating layer and the hard mask are planarized and a storage node of a capacitor is formed on the storage node contact.
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申请公布号 |
US2004161923(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040779494 |
申请日期 |
2004.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
BAE IN-DEOG;KONG CHANG-ILN;JEON JEONG-SIC;CHI KYEONG-KOO |
分类号 |
H01L21/28;H01L21/3205;H01L21/4763;H01L21/768;H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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