| 发明名称 |
Silicon-on-insulator wafer for RF integrated circuit |
| 摘要 |
An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.
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| 申请公布号 |
US2004159908(A1) |
申请公布日期 |
2004.08.19 |
| 申请号 |
US20040764938 |
申请日期 |
2004.01.26 |
| 申请人 |
FATHIMULLA MOHAMMED A.;KEYSER THOMAS |
发明人 |
FATHIMULLA MOHAMMED A.;KEYSER THOMAS |
| 分类号 |
H01L21/02;H01L21/265;H01L21/336;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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