IMPROVED METHOD FOR READING A NON-VOLATILE MEMORY CELL ADJACENT TO AN INACTIVE REGION OF A NON-VOLATILE MEMORY CELL ARRAY

摘要

A method of storing a data pattern and reproducing the data pattern within an array 30 of memory cells 48, which includes active columns 45b and 45g and inactive columns 46c and 45f, comprises storing the data pattern within the active columns 45b and 45g. An inactive memory cell programming pattern 32 is identified. The inactive memory cell programming pattern 32 identifies all, or a selected plurality, of the memory cells 48 in the inactive columns 45c and 45f in which a charge is to be stored for the purpose of periodically storing a charge in such memory cells 48 to prevent over erasure, during bulk erase, and leakage to active memory cells 48.