发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a structure having a high reliability in the structure in which a linear fin is mounted on a metallic base for a power semiconductor. SOLUTION: In the structure of a power semiconductor module with a power semiconductor element switching a current, an insulating substrate with a circuit pattern on which the element is attached, and the metallic base 101 on which the substrate is attached; the linear type fin 114 is formed in a region under the substrate on the opposed surface of the substrate attached surface of the base 101, and a length in the stripe direction of the fin is formed in the length or less in the vertical direction in the shape of the substrate. Accordingly, even when the fin 114 is formed to the base, the distortion of solder under the substrate is not made larger than a plate with no fin because the fin direction of the fin and the longitudinal direction of the substrate are arranged vertically. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004235175(A) 申请公布日期 2004.08.19
申请号 JP20030018178 申请日期 2003.01.28
申请人 HITACHI LTD 发明人 TANBA AKIHIRO;KAMIMURA NORITAKA;NAKAMURA TAKAYOSHI;SAITO RYUICHI
分类号 H01L23/36;(IPC1-7):H01L23/36 主分类号 H01L23/36
代理机构 代理人
主权项
地址