| 摘要 |
PROBLEM TO BE SOLVED: To provide a Hall element reduced in the variation per hour of an offset voltage/current and low in the cost thereof. SOLUTION: The Hall element 100 is provided with the principal part of the Hall element 100 or a diffusion area 22 formed on the main surface of a semiconductor substrate 21, while a groove 30 deeper than the diffusion area 22 is formed around the diffusion area 22 perpendicular to the main surface, so as to be symmetrical with respect to the center 22c of the diffusion area on the main surface of the semiconductor substrate 21. COPYRIGHT: (C)2004,JPO&NCIPI
|
