| 摘要 |
PURPOSE: A method for forming a structure of a line and an interconnection contact using a multi-layered hard mask is provided to form a bit line and a buried contact to the same direction as a gate line by using the multi-layered hard mask. CONSTITUTION: A routing layer is formed to perform an operation of a device. A multi-layered hard mask layer including the first hard mask layer(550), the second hard mask layer(571), and the third hard mask layer(591) is formed on the routing layer. The first hard mask layer, the second hard mask layer, and the third hard mask layer are formed with different insulating materials in order to obtain an etch selection ratio therebetween. A plurality of lines are formed by patterning the routing layer. A gap between the lines is filled with an insulating layer. An interconnection contact is formed into the insulating layer. |
