发明名称 SiC SUBSTRATE WITH GRAPHITE STRUCTURED BODY, METHOD OF MANUFACTURING THE SAME AND METHOD OF MANUFACTURING GRAPHITE STRUCTURED BODY
摘要 <P>PROBLEM TO BE SOLVED: To provide an SiC substrate with a graphite structured body which has a new constitution, a method of manufacturing the SiC substrate with the graphite structured body and a method of manufacturing the graphite structured body. <P>SOLUTION: An edge extending in-plane is formed on the main surface of the SiC substrate 1 having an Si face as the main surface. The main surface of the SiC substrate 1 is heat treated under vacuum to form a linear graphite structured body 10 on the main surface of the SiC substrate, the linear graphite structured body 10 being oriented in the direction along the main surface. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004231464(A) 申请公布日期 2004.08.19
申请号 JP20030021876 申请日期 2003.01.30
申请人 DENSO CORP 发明人 HISADA YOSHIYUKI;MITSUOKA YOSHIHITO;KONAKANO SHINICHI;MORISHITA TOSHIYUKI;ICHINOMIYA TAKEHIKO
分类号 C01B31/36 主分类号 C01B31/36
代理机构 代理人
主权项
地址