| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable thin film transistor by attaining a crystalline continuity of an active region and an impurity region, and to provide a method for manufacturing a high performance semiconductor device which integrates such as thin film transistor. SOLUTION: A gate electrode is formed by overlapping with one side of the impurity region, without overlapping with the other side of the impurity region. A capacitor electrode is overlapped with the other side of the impurity region, and a capacitance electrically connected to a pixel electrode is formed by the capacitor electrode, a gate insulated film and the other side of the impurity region. COPYRIGHT: (C)2004,JPO&NCIPI |
