发明名称 POLYCRYSTALLINE SILICON SUBSTRATE AND METHOD OF ROUGHING ITS SURFACE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a superior polycrystalline substrate by solving the conventional problem that a solar cell can not be improved in characteristics because complicated irregularities are formed when a damaged layer is removed by alkali etching before fine irregularities are formed by reactive-ion etching, and to provide a method of roughing its surface. <P>SOLUTION: In a method of roughing the surface of the polycrystalline silicon substrate, a large number of fine irregularities are formed on the surface of the polycrystalline silicon substrate through a dry etching method. The surface of the polycrystalline silicon substrate is etched with an alkaline water solution to set the ratio of its surface area to actual area at 1.1 or below, and then a large number of fine irregularities are provided through a dry etching method. By this setup, such problem can be solved that a solar cell of high efficiency can not be obtained because fine irregularities formed through reactive ion etching become irregular. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004235274(A) 申请公布日期 2004.08.19
申请号 JP20030019535 申请日期 2003.01.28
申请人 KYOCERA CORP 发明人 INOMATA YOSUKE
分类号 C01B33/02;H01L21/306;H01L21/3065;H01L31/0236;H01L31/04;H01L31/068;(IPC1-7):H01L31/04 主分类号 C01B33/02
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