| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a device and a method for processing plasma superior in stablity in mass production by controlling a deposition film depositing on the inside wall of a vacuum chamber. <P>SOLUTION: The device comprises a gas ring composing a part of a vacuum processing chamber 2 and having the nozzle of a processing gas, a belljar 12 for covering an uppper part of the gas ring and forming the vacuum processing chamber, and antennas 1a, 1b disposed at the upper part of the belljar 12 for supplying high frequency electric field to the vacuum processing chamber to generate plasma. The device also comprises a mounting base 5 for mounting a sample 13 in the vacuum processing chamber, a Faraday shield 8 arranged between the antennas 1a, 1b and the belljar 12 and supplied by high frequency bias voltage, and a deposition proof plate detachably fixed to the inner side of the gas ring except the nozzle of the processing gas. The area of the inner side of the gas ring including the deposition proof plate able to be seen from the side of the sample is set to approximately not less than 1/2 of the area of the sample. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
