发明名称 MASK BLANKS, MANUFACTURING METHOD THEREOF, ETCHING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of mask blanks for easily manufacturing a large quantity of mask blanks by performing a local etching, and to provide the mask blanks, an etching device and a manufacturing method of a semiconductor device. <P>SOLUTION: A thin film 8 of at least one layer is formed on one surface of a substrate 9. A part equivalent to at least one thin film region is removed from the other surface of the substrate 9. The substrate 9 is worked into a support body of the thin film 8. Plasma is locally generated in a part equivalent to the thin film region by an electrode corresponding to a size and a shape of the thin region, a region equivalent to the thin film region of the substrate 9 is removed, and the substrate 9 is worked. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004235218(A) 申请公布日期 2004.08.19
申请号 JP20030018800 申请日期 2003.01.28
申请人 SONY CORP 发明人 YOSHIZAWA MASAKI
分类号 G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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