SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method capable of obtaining a high mobility in a p-type MOS (metal oxide semiconductor) transistor while keeping the performance of an n-type MOS transistor. SOLUTION: A sacrifice insulating film 5 is formed on the surface of an n-well 3n and p-well 3p, and then the sacrifice insulating film 5 is made to remain only in an n-type region 2n by wet etching. Then, an SiGe layer is selectively epitaxially grown only on the n-well 3n. As a result, a strain SiGe layer 6 is formed based on the reference between the lattice constant of the n-well 3n and that of the SiGe layer. The sacrifice insulating film 5 is removed thereafter, and a silicon layer 7 is selectively epitaxially grown on the p-well 3p and the strain SiGe layer 6. The silicon layer 7 is either oxidized or nitrided to form a gate insulating film 8. After a conductor film is formed on the entire surface, etching is performed using a resist mask to form a gate electrode 9 from the conductor film. COPYRIGHT: (C)2004,JPO&NCIPI