| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a low permittivity film exhibiting excellent bonding resistance in the assembling process and exhibiting excellent breakdown voltage between interconnect lines on the same layer is employed as an interlayer insulation film. SOLUTION: Since an insulation film containing hydrogenation polysiloxane is employed as the interlayer insulation film 103 and etching is carried out using etching gas containing at least fluorocarbon gas and oxidation based gas, such a structure as the deterioration layer 105 of hydrogenation polysiloxane on the processing surface is thick at the upper part and thin at the lower part is obtained. Consequently, a semiconductor device exhibiting excellent bonding resistance and excellent breakdown voltage between interconnect lines on the same layer is attained. COPYRIGHT: (C)2004,JPO&NCIPI
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