| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of the withstand voltage of a semiconductor apparatus in which electrodes etc., are formed by etching polysilicon films by isotropic dry etching. SOLUTION: After a resist mask 3 is selectively formed on a polysilicon film 2 caused to deposit on the surface of a semiconductor layer 1, the exposed portion of the polysilicon film 2 is removed by performing isotropic dry etching, such as the chemical dry etching etc., while the semiconductor layer 1 is maintained at a temperature of 50-100°C. At the same time, the edge 7 of the polysilicon film 2 which becomes the terminating end or step of the film 2 is inclined at an angle of 41-65°to the surface of the semiconductor layer 1. COPYRIGHT: (C)2004,JPO&NCIPI
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