发明名称 |
Aspect ratio controlled etch selectivity using time modulated DC bias voltage |
摘要 |
A modulated bias power etching method for etching a substrate is disclosed. The method alternatively deposits and etches material from a low aspect area of an integrated circuit device to form a static area while etching material from a high aspect area. The modulation pulse period and repetition rate are adjusted to permit deposition at low aspect ratio and very little or no deposition at high aspect ratio during the deposition cycle and to permit etching of the material deposited on the low aspect ratio area and etching of the material in the high aspect ratio area during the etching cycle.
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申请公布号 |
US2004161941(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040779843 |
申请日期 |
2004.02.18 |
申请人 |
DONOHOE KEVIN G.;ABATCHEV MIRZAFER;VELTROP ROBERT |
发明人 |
DONOHOE KEVIN G.;ABATCHEV MIRZAFER;VELTROP ROBERT |
分类号 |
H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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