| 摘要 |
A method for fabricating multilayer storage capacitors of an LCD panel is disclosed. For a two-layer storage capacitor, the structure includes a thin film transistor region over a first substrate, a pixel electrode disposed on the periphery of the thin film transistor region, and a plurality of oxide layers. The oxide layers have data lines and gate lines, wherein the crossover of each gate line and data line corresponds to the position of a pixel electrode. An oxide layer can be added between the pixel electrode and the first substrate for creating a three-layer storage capacitor, wherein the shielding layer or semiconductor active layer is connected to the gate line. Having a small interlayer gap between the transparent electrode layer and the first metal layer and no cross talk, the capacitance of the storage capacitor can be considerably increased.
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