发明名称 Semiconductor device and method for designing the same
摘要 In a semiconductor device having an uppermost layer wiring beneath a bump to be connected to a rewiring layer wiring, the uppermost layer wiring is formed so that the surface of a protection film covered with the uppermost layer wiring has no unevenness beneath the bump.
申请公布号 US2004159943(A1) 申请公布日期 2004.08.19
申请号 US20040761310 申请日期 2004.01.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISEDA YASUNAGA;KANAZAWA HIDEKI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/82;H01L21/822;H01L23/485;H01L27/04;(IPC1-7):H01L23/48 主分类号 H01L23/52
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