| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-performance semiconductor element whose power consumption is kept small and which can be used for a long period. <P>SOLUTION: The semiconductor element is constituted by forming an AIN-based or GaN-based semiconductor layer 2 on a single-crystal substrate 1 and also bonding an electrode 3 onto the semiconductor layer 2, and the electrode 2 is formed of diboride single crystal represented as a general chemical formula XB<SB>2</SB>(X includes at least one kind from Ti and Zr). <P>COPYRIGHT: (C)2004,JPO&NCIPI |
