发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To prevent fine resist patterns from falling in a drying process after development processing in forming the resist patterns. <P>SOLUTION: The positive type resist composition is used in a resist pattern forming method including a process of substituting the liquid existing on a substrate after alkaline development with a liquid for critical drying, then drying the liquid for critical drying through a critical state. The composition contains a resin component (A) which is &le;20mol% in the content of alkaline solubility, has an acid dissociative dissolution suppressing group and is increased in the alkaline solubility by the effect of an acid, an acid forming agent component (B) which generates an acid by exposure and an organic solvent (C) which dissolves the components (A) and (B). The component (A) has (a1) a constitutional unit including the acid dissociative dissolution suppressing group, (a2) a constitutional unit including a lactone unit, and (a3) a constitutional unit including an alcoholic hydroxyl group-containing polycyclic group. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004233953(A) 申请公布日期 2004.08.19
申请号 JP20030151573 申请日期 2003.05.28
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KUBOTA NAOTAKA;ISHIKAWA KIYOSHI;SATO MITSURU;MATSUMIYA YU
分类号 G03F7/039;G03F7/32;G03F7/40;H01L21/027 主分类号 G03F7/039
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