Silicon carbide semiconductor device having enhanced carrier mobility

摘要

The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n<+> source region (2) and an n<+> drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).