| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to improve uniformity and roughness of a metal silicide layer by enlarging the grain size of a polysilicon layer. CONSTITUTION: A gate oxide layer(23), the first polysilicon layer(24) and an amorphous silicon layer are sequentially formed on a substrate(21). The amorphous silicon layer is changed to the second polysilicon layer(200) with large grain size by annealing. A gate electrode is formed by patterning the second and first polysilicon layers. An insulating spacer(25) is formed at both sidewalls of the gate electrode. A junction region(26) is formed in the substrate. A metal silicide layer(27) is then formed on the junction region and the gate electrode.
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