| 摘要 |
PROBLEM TO BE SOLVED: To reduce current consumption by cutting down the extreme current consumption due to a shortcircuit between write-buffers and a wasteful operation even when writing operations in the same address are simultaneously generated, in a semiconductor memory. SOLUTION: A 2 port-SRAM having memory cell array 10 formed by disposing a plurality of memory cells in a matrix shape and two access systems independently performing a read-out operation and a write-in operation, is provided with an address match detection circuit 40 detecting that a first address and a second address match each other, a write matching detection circuit 35 detecting that the first and the second systems are simultaneously in a write state and write controlling circuits 31 and 32 deactivating write-buffers of the first and the second systems by a signal showing address match from the address match detection circuit and a signal showing the simultaneous write state from the write matching detection circuit. COPYRIGHT: (C)2004,JPO&NCIPI
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