发明名称 METHOD FOR MANUFACTURING SEMI-TRANSPARENT SEMI-REFLECTIVE ELECTRODE SUBSTRATE, REFLECTIVE ELEMENT SUBSTRATE, METHOD FOR MANUFACTURING SAME, ETCHING COMPOSITION USED FOR THE METHOD FOR MANUFACTURING THE REFLECTIVE ELECTRODE SUBSTRATE
摘要 <p>An etchant for selective etching is used to simplify the production process of a semi-transparent semi-reflective electrode substrate, and temporal loss is not produced by avoiding troublesome repeated works, thereby efficiently providing a semi-transparent semi-reflective electrode substrate. A method for manufacturing a semi-transparent semi-reflective electrode substrate where a metal oxide layer (12) made of at least indium oxide and an inorganic compound layer (14) at least made of Al or Ag are formed in order of mention. The method comprises a step of etching the inorganic compound layer (14) with an etchant lambda composed of phosphoric acid, nitric acid, and acetic acid and a step of etching the metal oxide layer (12) with an etchant sigma containing oxalic acid.</p>
申请公布号 WO2004070812(A1) 申请公布日期 2004.08.19
申请号 WO2003JP14810 申请日期 2003.11.20
申请人 IDEMITSU KOSAN CO.,LTD.;INOUE, KAZUYOSHI 发明人 INOUE, KAZUYOSHI
分类号 C23F1/20;C23F1/30;G02F1/1335;G02F1/1343;H01L51/52;(IPC1-7):H01L21/308;G02F1/134;H05B33/26 主分类号 C23F1/20
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