| 摘要 |
<p>An n-type buried channel (3), a silicon oxide film (4), a poly-Si transfer electrode (5), a PSG film (6) as an insulating interlayer, an aluminum interconnection (7), and a silicon nitride film (8) are stacked on one surface of a p-type silicon substrate (1) to form a CCD (2). The other surface is protected by a silicon oxide film (9), and a p<+>-type accumulation layer (10) is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate (13) is anodically bonded on the CCD via an insulating polyimide film (11), and a conductive aluminum (12) film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate. <IMAGE></p> |
