| 摘要 |
PROBLEM TO BE SOLVED: To produce a high density optical output by forming a high resistance region at a part of p-layer of a light emitting element comprising an n-layer of group III nitride semiconductor exhibiting n-type conductivity, and a p-layer exhibiting p-type conductivity. SOLUTION: A buffer layer 2 is formed on a sapphire substrate 1 and silicon doped high carrier concentration n<+> layers 3, 4, an active layer 5, a magnesium doped p-layers 6, and a p-layer 7 are formed thereon. Furthermore, a metal electrode 9 to be connected with the p-layer 7 and a high resistance region 8 formed at a part of p-layers 6, 7 is formed along with a metal electrode 11 to be connected with the high carrier concentration n<+> layers 4. A single crystal sapphire substrate 1 subjected to organic cleaning and heat treatment cleaning is set on a susceptor placed in the reaction chamber of an organo- metallic CVD system and hydrogen is fed at a specific flow rate under normal pressure. Subsequently, the temperature is controlled to a specific level and each layer is formed by doping silicon, magnesium, aluminum, etc., thus fabricating a high density high output light emitting element. |
