HIGH-DENSITY PLASMA CVD APPARATUS

摘要

PURPOSE: A high-density plasma CVD(Chemical Vapor Deposition) apparatus is provided to form uniformly thickness of an insulating layer by injecting uniformly a gas on the surface of a wafer. CONSTITUTION: A chamber(110) is used for performing a process for depositing an insulating layer. A cover(120) is installed on an upper part of the chamber. An electrostatic chuck(130) is arranged at the bottom of the chamber. A wafer is loaded and fixed on the electrostatic chuck. The first injectors(142) are arranged on an inner wall of the chamber in order to inject a source gas. The second injectors(144) are arranged between the first injectors. The second injectors are longer than the first injectors. The second injectors are used for forming uniformly the amount of gas on an edge and a center of the wafer.