SONOS MEMORY CELL AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A SONOS memory cell and a fabricating method thereof are provided to improve operating speed by forming a charge storage insulating layer only on a charge trap insulating region. CONSTITUTION: A source region and a drain region are formed on a predetermined region of a semiconductor substrate(50). A channel region(76) is defined between the source region and the drain region. A charge storage insulating layer is formed on an edge of the channel region adjacent the source region and the drain region. A gate insulating layer(64) is formed on the channel region between charge trap insulating layers(72). A gate electrode(70) is formed on the gate insulating layer and the charge trap insulating layer.