| 摘要 |
PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to improve gap-filling property by improving reflow of the insulating layer. CONSTITUTION: Gate line patterns(14) spaced apart from each other are formed on a semiconductor substrate(10). A fluidity insulating layer(15) is deposited on the entire surface of the resultant structure. The fluidity insulating layer is filled between the gate line patterns by reflow using annealing. At this time, the annealing is performed at atmospheric pressure using a desired gas containing PH3 and BF2 gas.
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