发明名称 Ion irradiation of a target at very high and very low kinetic ion energies
摘要 A particle-beam exposure apparatus ( 1 ) for irradiating a target ( 41 ) by means of a beam ( 2 ) of energetic electrically charged particles comprises: an illumination system ( 101 ) for generating and forming said particles into a directed beam ( 21 ); a pattern definition means ( 102 ) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam ( 22 ) emerging from the pattern definition means through the apertures; and a projection system ( 103 ) positioned after the pattern definition means ( 102 ) for projecting the patterned beam ( 22 ) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means ( 32 ) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.
申请公布号 GB0415996(D0) 申请公布日期 2004.08.18
申请号 GB20040015996 申请日期 2004.07.16
申请人 IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人
分类号 G03F7/20;H01J37/305;H01J37/317;H01L21/027 主分类号 G03F7/20
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