发明名称 |
Ion irradiation of a target at very high and very low kinetic ion energies |
摘要 |
A particle-beam exposure apparatus ( 1 ) for irradiating a target ( 41 ) by means of a beam ( 2 ) of energetic electrically charged particles comprises: an illumination system ( 101 ) for generating and forming said particles into a directed beam ( 21 ); a pattern definition means ( 102 ) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam ( 22 ) emerging from the pattern definition means through the apertures; and a projection system ( 103 ) positioned after the pattern definition means ( 102 ) for projecting the patterned beam ( 22 ) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means ( 32 ) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam. |
申请公布号 |
GB0415996(D0) |
申请公布日期 |
2004.08.18 |
申请号 |
GB20040015996 |
申请日期 |
2004.07.16 |
申请人 |
IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH |
发明人 |
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分类号 |
G03F7/20;H01J37/305;H01J37/317;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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