The present invention relates to a photodiode, comprising a photo-active layer which layer comprises at least one electron donating material, and at least one fullerene derivative as an electron accepting material. The present invention further relates to a method for making such a photo diode, to a photo-active layer and to a fullerene derivative. <IMAGE>
申请公布号
EP1447860(A1)
申请公布日期
2004.08.18
申请号
EP20030075461
申请日期
2003.02.17
申请人
RIJKSUNIVERSITEIT GRONINGEN
发明人
HUMMELEN, JAN CORNELIS;JANSSEN, RENE ALBERT JOHAN;KNOL, JOOP;WIENK, MARTINUS MARIA;KROON, JOHANNES MARTINUS;VERHEES, WILHELMUS JOHANNUS HERMANUS
