发明名称 |
CRYSTAL PRODUCTION METHOD FOR GALLIUM OXIDE;IRON MIXED CRYSTAL |
摘要 |
A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. <??>By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper and a lower position and which are composed of Ga2-xFexO3, are heated in a gas atmosphere with halogen lamps (6, 7) disposed at confocal areas so as to form a floating melting zone between the ends of the material bars (3, 5) which are disposed at the upper and the lower position and which are composed of Ga2-xFexO3, a Ga2-xFexO3 single crystal having an orthorhombic crystal structure is formed. <IMAGE>
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申请公布号 |
EP1447464(A1) |
申请公布日期 |
2004.08.18 |
申请号 |
EP20020807688 |
申请日期 |
2002.10.11 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
KANEKO, YOSHIO;TOKURA, YOSHINORI;MIYASAKA, SHIGEKI |
分类号 |
C30B29/22;C30B13/00;C30B13/22;H01L41/20;(IPC1-7):C30B29/22 |
主分类号 |
C30B29/22 |
代理机构 |
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主权项 |
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地址 |
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