发明名称 CRYSTAL PRODUCTION METHOD FOR GALLIUM OXIDE;IRON MIXED CRYSTAL
摘要 A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. <??>By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper and a lower position and which are composed of Ga2-xFexO3, are heated in a gas atmosphere with halogen lamps (6, 7) disposed at confocal areas so as to form a floating melting zone between the ends of the material bars (3, 5) which are disposed at the upper and the lower position and which are composed of Ga2-xFexO3, a Ga2-xFexO3 single crystal having an orthorhombic crystal structure is formed. <IMAGE>
申请公布号 EP1447464(A1) 申请公布日期 2004.08.18
申请号 EP20020807688 申请日期 2002.10.11
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 KANEKO, YOSHIO;TOKURA, YOSHINORI;MIYASAKA, SHIGEKI
分类号 C30B29/22;C30B13/00;C30B13/22;H01L41/20;(IPC1-7):C30B29/22 主分类号 C30B29/22
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