| 摘要 |
A non-volatile semiconductor memory device comprises a plurality of blocks each having a plurality of memory cells to be erased at a time and a decoder for selecting the memory cells, each of the blocks having a block decoder for latching a selection signal thereof in pre-programming and for selecting all of the latched blocks by the selection signal at the same time, a sense amplifier, and an address control circuit for controlling a sequence, the sequence including counting addresses of the memory cells in erasing and erasing all of the selected memory cells after pre-programming, all of the blocks having the latched selection signal being controlled to be collectively erased by the address control circuit. |
