发明名称 |
Metrology for monitoring a rapid thermal annealing process |
摘要 |
A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.
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申请公布号 |
US6777251(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020175702 |
申请日期 |
2002.06.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD |
发明人 |
LU CHING SHAN;LEE FU-SU;YOU WEI-MING;TWU JIH-CHURNG;HSIAO YU-CHIEN |
分类号 |
H01L21/00;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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